Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Patent
1991-06-28
1994-11-01
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
117925, 23295R, 564107, 564108, C30B 700
Patent
active
053604784
ABSTRACT:
Disclosed is a method for recrystallizing solid materials (e.g. RDX) from systems comprised of a solute, which is the eventual material recrystallized, a liquid which is a suitable solvent for the solute, and a gaseous component which is soluble within the solvent and whose presence therein causes the solvent to approach or attain a supersaturated state, thereby precipitating (recrystallizing) the solute material. By control of process parameters (pressure, temperature, time, and rate, rate of injection of gas, etc.) the operator can influence the properties of the material recrystallized.
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Connick et al., "Dislocation Etching of Cyclotrimethylene Trinitramine Crystals" Journal of Crystal Growth, vol. 5 (1969) pp. 65-69.
Halfpenny et al. "Dislocation in Energetic Materials" Journal of Crystal Growth vol. 69 (1984) pp. 73 to 81.
Gallagher et al. "Gas Antisolvent Recrystallization: New Process to Recrystallize Compounds . . . " ACS Symp. Ser. 406 1989 abstract only.
Coffey M. P.
Gallagher P. M.
Krukonis Val J.
Kunemund Robert
Phasex Corporation
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