Group III nitride crystal, crystal growth process and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

Reexamination Certificate

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C117S070000, C117S071000

Reexamination Certificate

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07981213

ABSTRACT:
A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.

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Hisanori Yamana et al.—“Preparation of GaN Single Crystals Using a Na Flux,” Chem. Mater. 1997, 9, pp. 413-416.
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