Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Nitride containing (e.g. – gan – cbn) {c30b 29/38}
Reexamination Certificate
2008-05-20
2008-05-20
Kunemund, Robert (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Inorganic containing single-crystal (e.g., compound, mixture, co
Nitride containing (e.g., gan, cbn) {c30b 29/38}
C438S046000, C257S618000
Reexamination Certificate
active
11355985
ABSTRACT:
A GaN substrate1, a group III nitride semiconductor substrate, is provided with an OF portion2for the periphery thereof. The bevel7on the periphery of the nitric polarity face5side of the GaN substrate1is provided throughout the entire periphery of the GaN substrate1including the OF portion2, wherein the beveling angle θ2of the bevel7is given a value in the range over 30° to 60° inclusive.
REFERENCES:
patent: 5021862 (1991-06-01), Ogino
patent: 5751055 (1998-05-01), Maruyama et al.
patent: 7-226349 (1995-08-01), None
patent: 2000-068171 (2000-03-01), None
patent: 2002-356398 (2002-12-01), None
Chaet Marissa W.
Hitachi Cable Ltd.
Kunemund Robert
Mattingly ,Stanger ,Malur & Brundidge, P.C.
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