Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-10-12
2009-10-13
Bell, Bruce F (Department: 1795)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S097000, C117S103000, C117S108000, C427S115000, C427S497000, C427S523000, C427S564000, C429S047000, C429S047000, C429S047000, C204S283000, C204S284000, C204S290140, C502S101000, C029S623100
Reexamination Certificate
active
07601216
ABSTRACT:
A method for forming a patterned noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web with a patterned mask overlaid thereto to a first ion beam having an energy not higher than 500 eV, and to a second beam having an energy of at least 500 eV, containing the ions of at least one noble metal and a gas diffusion electrode.
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Allen Robert J.
Gulla Andrea F.
BASF Fuel Cell GmbH
Bell Bruce F
Muserlian Charles A.
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