Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Reexamination Certificate
2005-04-15
2011-10-18
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
C117S045000, C117S050000, C117S054000, C117S075000, C117S078000
Reexamination Certificate
active
08038794
ABSTRACT:
A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.
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Hirota Ryu
Kawamura Fumio
Mori Yusuke
Nakahata Seiji
Sasaki Takatomo
Kunemund Bob M
McDermott Will & Emery LLP
Mori Yusuke
Sumitomo Electric Industries Ltd.
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