Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2007-05-22
2007-05-22
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S074000, C117S075000, C117S077000, C117S223000, C117S224000, C117S952000
Reexamination Certificate
active
10702776
ABSTRACT:
A crystal growth method of a group III nitride includes the steps of forming a melt mixture of an alkali metal and a group III element in a reaction vessel, and growing a crystal of a group III nitride formed of the group III element and nitrogen from the melt mixture in the reaction vessel, wherein the step of growing the crystal of the group III nitride is conducted while controlling an increase rate of degree of supersaturation of a group III nitride component in the melt mixture in a surface region of the melt mixture.
REFERENCES:
patent: 5665985 (1997-09-01), Iwata
patent: 5684523 (1997-11-01), Satoh et al.
patent: 6592663 (2003-07-01), Sarayama et al.
patent: 2002/0046695 (2002-04-01), Sarayama et al.
patent: 2002/0175338 (2002-11-01), Sarayama et al.
patent: 2003/0046695 (2003-03-01), Billmaier et al.
patent: 2003/0164138 (2003-09-01), Sarayama et al.
patent: 2001-064097 (2001-03-01), None
patent: 2001-064098 (2001-03-01), None
patent: 2001-102316 (2001-04-01), None
patent: 2001-119103 (2001-04-01), None
Hisanori Yamana et al.—“Preparation of GaN Single Crystals Using a Na Flux,” Chem. Mater. 1997, 9, pp. 413-416.
Sylwester Porowski—“Bulk and homoepitaxial GaN-growth and characterization,” Journal of Crystal Growth 189/190, 1998 Elsevier Science B.V., pp. 153-158.
Iwata Hirokazu
Sarayama Seiji
Dickstein & Shapiro LLP
Kunemund Robert
Ricoh & Company, Ltd.
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