Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2011-08-23
2011-08-23
Song, Matthew (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S054000, C117S064000, C117S088000, C117S091000, C117S099000, C117S952000
Reexamination Certificate
active
08002892
ABSTRACT:
Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107dislocations/cm2.
REFERENCES:
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 7335262 (2008-02-01), Dwilinski et al.
patent: 2002/0166502 (2002-11-01), Vaudo et al.
patent: 2002/0192507 (2002-12-01), Dwilinski et al.
patent: 2003/0209185 (2003-11-01), Ueno et al.
patent: 2005/0217565 (2005-10-01), Lahreche et al.
patent: 2006/0051942 (2006-03-01), Sasaki et al.
patent: 2006/0191472 (2006-08-01), Dwilinski et al.
patent: 2002-201100 (2002-07-01), None
patent: 2003-273019 (2003-09-01), None
patent: WO03/097906 (2003-11-01), None
patent: WO 03097906 (2003-11-01), None
patent: WO 03100839 (2003-12-01), None
patent: WO-2004-013385 (2004-02-01), None
Kawamura et al., “Growth of a Large GaN Single Crystal using the Liquid Phase Epitaxy (LPE) Technique”, Jpn. J. Appl. Phys. vol. 42 (2003) pp. L4-L6.
Isamu Akasaki, “Group-III Nitride Semiconductor,” 1st Ed., Baifukan, Tokyo, 1999, (pp. 67-91).
Hisanori Yamane, et al., “Preparation of GaN Single Crystals Using a Na Flux,” Chem. Mater., vol. 9, 1997, pp. 413-416.
Fumio Kawamura, et al., “Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique,” Jpn. J. Appl. Phys., vol. 42 (2003), Part 2, No. 1A/B, Jan. 15, 2003, (pp. L4-L6).
Takayuki Inoue, et al., “Growth of Bulk GaN Single Crystals by the Pressure-Controlled Solution Growth Method,” Jpn. J. Appl. Phys., vol. 39 (2000), Part 1, No. 4B, Apr. 2000, (pp. 2394-2398).
V.A. Sukhoveyev et al., “GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique,” GaN and Related Alloys—1999. Symposium (Materials Research Society Symposium Proceedings vol. 595), pp. W6.6.1-6, XP-002520881, Mater. Res. Soc. Warrendale, PA.
Hirota Ryu
Nakahata Seiji
Ueno Masaki
Judge James W.
Song Matthew
Sumitomo Electric Industries Ltd.
LandOfFree
Group III nitride crystal substrate, method of its... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III nitride crystal substrate, method of its..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride crystal substrate, method of its... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2662612