Group III nitride crystal substrate, method of its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Reexamination Certificate

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C117S054000, C117S064000, C117S088000, C117S091000, C117S099000, C117S952000

Reexamination Certificate

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08002892

ABSTRACT:
Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107dislocations/cm2.

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