GaN single crystal

Details GaN single crystal GaN single crystal

1996-05-17

1998-09-22

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117 97, C30B 2502

Patent

active

058109250

ABSTRACT:
A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 .mu.m, a method for producing the GaN single crystal having superior quality and sufficient thickness permitting its use as a substrate and a semiconductor light emitting element having high luminance and high reliability, comprising, as a substrate, the GaN single crystal having superior quality and/or sufficient thickness permitting its use as a substrate.

REFERENCES:
patent: 4918497 (1990-04-01), Edmond
patent: 5027168 (1991-06-01), Edmond
patent: 5527766 (1996-06-01), Eddy
patent: 5602080 (1997-02-01), Bednorz et al.
"In Situ Monitoring of GaN Growth Using Interference Effects"; Nakamura; J. Journal of Appl. Physics; vol. 30, No. 8, Aug., 1991, pp. 1620-1627.
"In Situ Monitoring and Hahl Measurements of GaN Grown With GaN Buffer Layers"; J. Appl. Phys. 71(11), 1 Jun. 1992; Nakamura, et al.,
"Hydride Vapor Phase Epitaxial Growth Of A High Quality GaN Film Using A ZnO Buffer Layer"; Appl. Phys. Lett. 30, Nov. 1992; Detchprohm, et al.

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