Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-03-03
2008-09-02
Bell, Bruce F. (Department: 1795)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S097000, C117S103000, C117S108000, C427S115000, C427S497000, C427S523000, C427S564000, C429S047000, C429S047000, C429S047000, C204S283000, C204S284000, C204S290140, C502S101000, C029S623500, C118S7230FI
Reexamination Certificate
active
07419546
ABSTRACT:
A method for forming a noble metal coating on a gas diffusion medium substantially free of ionomeric components comprising subjecting an electrically conductive web to a first ion beam having an energy not higher than 500 eV, then to a second beam having an energy of at least 500 eV, containing the ions of at least one noble metal and electrodes provided by the method.
REFERENCES:
patent: 6673127 (2004-01-01), Allen et al.
patent: 2003/0130114 (2003-07-01), Hampden-Smith et al.
patent: 2004/0115516 (2004-06-01), Miyake et al.
patent: 2006/0234111 (2006-10-01), Gulla et al.
Allen Robert J.
De Castro Emory
Gulla Andrea F.
Ramunni Enrico
BASF Fuel Cell GmbH
Bell Bruce F.
Muserlian Charles A.
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