LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Elimination of thermal mismatch defects in epitaxially deposited

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Enhanced chemical vapor deposition of diamond and related materi

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Epitaxial CoSi2 on MOS devices

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial deposition process and apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial film produced by sequential hydride vapor phase...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...

Epitaxial growth and cloning of a precursor chiral nanotube

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial growth method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial growth method

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Epitaxial growth method of semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial growth method of semiconductor crystal and molecular b

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial growth of diamond from vapor phase

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial growth rate varying method for side surface of semicon

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial growth substrate and a method for producing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial material grown laterally within a trench and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxial oxide films via nitride conversion

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial silicon wafer and production method thereof

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Epitaxial-wafer fabricating process

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxially coated semiconductor wafer and process for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Epitaxially coated semiconductor wafers having low-oxygen zone o