Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2006-02-03
2009-02-24
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S089000, C257S001000, C438S638000
Reexamination Certificate
active
07494545
ABSTRACT:
An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is introduced into a plasma cavity, and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing chamber and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
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International Search Report for PCT/US2007/001031 pp. 1-3.
Kao Chien-Teh
Kim Yihwan
Kuppurao Satheesh
Lam Andrew
Lu Xinliang
Applied Materials Inc.
Diehl Servilla LLC
Hiteshew Felisa C
Servilla, Esq. Scott S.
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