Epitaxial silicon wafer and production method thereof

Details Epitaxial silicon wafer and production method thereof Epitaxial silicon wafer and production method thereof

2009-07-20

2011-12-20

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

C117S090000, C117S092000, C117S093000, C438S455000, C438S507000

Reexamination Certificate

active

08080106

ABSTRACT:
Provided are an epitaxial silicon wafer in which the warping is reduced by rendering a cross-sectional form of a silicon wafer for epitaxial growth into an adequate form as compared with the conventional one, and a production method thereof.An epitaxial silicon wafer comprising a silicon wafer for epitaxial growth and an epitaxial layer is characterized in that the epitaxial layer is formed on a silicon wafer for epitaxial growth having a cross-sectional form satisfying a relation of a given expression.

REFERENCES:
patent: 5834363 (1998-11-01), Masanori
patent: 7902039 (2011-03-01), Tomita et al.
patent: 2005/0215858 (2005-09-01), Vail, III
patent: 06-112120 (1994-04-01), None
patent: 2008-140856 (2008-06-01), None

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