Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2005-01-25
2005-01-25
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C438S682000, C438S683000
Reexamination Certificate
active
06846359
ABSTRACT:
An SixNyor SiOxNyliner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2layer underneath the liner. The CoSi2layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2layer.
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Greene Joseph E.
Lim Chong Wee
Petrov Ivan Georgiev
Shin Chan Soo
Greer Burns & Crain Ltd.
Hiteshew Felisa
The Board of Trustees of the University of Illinois
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