Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2008-11-18
2011-10-18
Kunemund, Bob M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S086000, C117S090000, C117S095000, C118S715000
Reexamination Certificate
active
08038793
ABSTRACT:
The invention provides an epitaxial growth method which is a single wafer processing epitaxial growth method by which at least a single crystal substrate is placed in a reaction chamber with an upper wall having a downward convexity and an epitaxial layer is deposited on the single crystal substrate by introducing raw material gas and carrier gas into the reaction chamber through a gas feed port, in which, after any one of the radius of curvature of the upper wall of the reaction chamber and a difference between an upper end of the gas feed port and a lower end of the upper wall of the reaction chamber in the height direction or both are adjusted in accordance with the flow rate of the carrier gas which is introduced into the reaction chamber through the gas feed port, an epitaxial layer is deposited on the single crystal substrate. As a result, a single wafer processing epitaxial growth method is provided that can obtain the effects, such as an increase in the quality of an epitaxial wafer and an increase in productivity, which are produced by the degree of the flow rate of carrier gas, and deposit an epitaxial layer on a single crystal substrate without deforming the film thickness shape.
REFERENCES:
patent: 4322592 (1982-03-01), Martin
patent: 6099648 (2000-08-01), Anderson
patent: 1-239086 (1989-09-01), None
patent: A-2001-044125 (2001-02-01), None
patent: A-2001-512901 (2001-08-01), None
International Search Report issued in International Application No. PCT/JP2008/003359 on Dec. 16, 2008 (with English-language translation).
Kunemund Bob M
Oliff & Berridg,e PLC
Shin-Etsu Handotai & Co., Ltd.
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