Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...
Reexamination Certificate
2008-07-16
2011-10-18
Kornakov, Michael (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Forming a platelet shape or a small diameter, elongate,...
C117S088000, C117S094000, C117S097000, C117S099000, C117S100000, C117S101000, C117S106000, C977S722000, C977S734000, C977S740000, C977S742000, C977S748000, C977S750000, C977S751000
Reexamination Certificate
active
08038795
ABSTRACT:
A precursor chiral nanotube with a specified chirality is grown using an epitaxial process and then cloned. A substrate is provided of crystal material having sheet lattice properties complementary to the lattice properties of the selected material for the nanotube. A cylindrical surface(s) having a diameter of 1 to 100 nanometers are formed as a void in the substrate or as crystal material projecting from the substrate with an orientation with respect to the axes of the crystal substrate corresponding to the selected chirality. A monocrystalline film of the selected material is epitaxially grown on the cylindrical surface that takes on the sheet lattice properties and orientation of the crystal substrate to form a precursor chiral nanotube. A catalytic particle is placed on the precursor chiral nanotube and atoms of the selected material are dissolved into the catalytic particle to clone a chiral nanotube from the precursor chiral nanotube.
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Barker Delmar L.
Owens William R.
Bratland, Jr. Kenneth A
Gifford Eric A.
Kornakov Michael
Raytheon Company
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