Epitaxial growth of diamond from vapor phase

Details Epitaxial growth of diamond from vapor phase Epitaxial growth of diamond from vapor phase

1993-09-22

1995-12-12

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 94, 117101, 117929, 423446, C30B 2904

Patent

active

054740215

ABSTRACT:
A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions:

REFERENCES:
patent: 5127983 (1992-07-01), Imai et al.
patent: 5198070 (1993-03-01), Jones
patent: 5275798 (1994-01-01), Aida
S. Iijima et al.; Appl. Phys. Lett. 57 (1990), 2646-2648 Early Formation Of Chemical Vapor Deposition Diamond Films.
M. W. Geis et al., Appl. Phys. Lett., vol. 58, pp. 2485-2487 Large-Area Mosaic Diamond Films Approaching Single-Crystal Quality (1991).

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