Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent
1995-10-16
1998-06-16
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
Including change in a growth-influencing parameter
117 92, 117108, 117956, 117958, C30B 2514
Patent
active
057663459
ABSTRACT:
An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.
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A. Taike, et al.,"P-Type Conductivity Control of ZnSe Highly Doped with Nitrogen by Metalorganic Molecular Beam Epitaxy", Applied Physics Letters, vol. 56, No. 20, May 14, 1990, pp. 1989-1991, XP 000149929.
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Ito Satoshi
Minatoya Rikako
Nakano Kazushi
Tomiya Shigetaka
Kunemund Robert
Sony Corporation
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