Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1996-03-01
1999-03-30
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 88, 117103, 117104, 117108, 117953, 117954, C30B 2514
Patent
active
058882944
ABSTRACT:
An improved epitaxial growth rate varying method for a side surface of a semiconductor pattern capable of controlling a growth rate of a side surface of a semiconductor pattern by controlling the amount of CCl.sub.4 gas supplied when forming an epitaxial layer on a patterned GaAs substrate in a metalorganic chemical deposition method, thus fabricating a desired quantum wire, and which is characterized by controlling a side-surface growth rate of an epitaxial layer in accordance with the CCl.sub.4 doping gas flow rate while an epitaxial layer is formed on a patterned GaAs substrate in a metalorganic chemical deposition method and in achieving a desired substantial flatness.
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Kim Moo sung
Kim Yong
Min Suk-ki
Korea Institute of Science and Technology
Kunemund Robert
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