Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-05-17
1996-01-23
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 94, 117 95, 117106, 117929, C30B 2904
Patent
active
054858046
ABSTRACT:
A method for creating a uniform thin film of a high surface energy material on a substrate comprising the steps of providing an oppositely charged surface on the substrate, if such does not exist, from that of particles of the high surface energy material, exposing the substrate to an aqueous colloidal suspension of particles composed of the high surface energy material to adsorb seed particles onto the surface of the substrate, and then depositing a uniform thin film of the high surface energy material by chemical vapor deposition onto the seeded substrate.
REFERENCES:
patent: 5023068 (1991-06-01), Jones
patent: 5128006 (1992-07-01), Mitchell et al.
patent: 5242711 (1993-09-01), DeNatale et al.
patent: 5308661 (1994-05-01), Feng et al.
patent: 5334342 (1994-08-01), Harker et al.
Slipenynk et al, "Stability of a Diamond-Powder Suspension in the Presence of Surfactants and Flocculants", Ukr. Khim. Zh. (Russia Ed) 1993 59(7) pp. 713-717 Abs. Only.
Mortgnova et al. "Adsorption of Amines From Solutions on Synthetic Diamond", Fie. Khim. Kendens. Faz. Sverkhtverdyth Mates, Ikh. Granits Rardeta 1975 pp. 113-116 Abs. Only.
Adair James J.
Singh Rajiv K.
Kunemund Robert
Saitta Thomas C.
University of Florida
LandOfFree
Enhanced chemical vapor deposition of diamond and related materi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Enhanced chemical vapor deposition of diamond and related materi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced chemical vapor deposition of diamond and related materi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1499037