LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

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Method for preparing single crystal oxide thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing a gallium nitride epitaxial layer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing a light-emitting semiconductor device

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing a positively doped semiconductor with...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Method for producing a precise alloy composition from input vari

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Method for producing a single-crystalline film of KLN or KLNT

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Using an energy beam or field – a particle beam or field – or...

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Method for producing a wafer with a monocrystalline silicon carb

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for producing by vapour-phase epitaxy a gallium...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for producing coated workpieces, uses and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing group III nitride compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing Group III nitride compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing III-N layers, and III-N layers or III-N...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing N-type semiconducting diamond

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing narrow wires comprising titanium oxide,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing nitride semiconductor crystal, and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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Method for producing powders made of gallium nitride and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing semiconductor crystal

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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Method for producing semiconductor device, method for...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

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Method for producing semiconductor wafer

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

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Method for producing silicon epitaxial wafer and silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

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