Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2003-07-24
2008-11-25
Kunemund, Robert M. (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S091000, C117S094000, C117S095000
Reexamination Certificate
active
07455729
ABSTRACT:
The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. The invention is characterized in that the gallium nitride deposition comprises at least one step of vapour-phase epitaxial lateral overgrowth, in that at least one of said epitaxial lateral overgrowth steps is preceded by etching openings either in a dielectric mask previously deposited, or directly into the substrate, and in that it consists in introducing a dissymmetry in the environment of dislocations during one of the epitaxial lateral overgrowth steps so as to produce a maximum number of curves in the dislocations, the curved dislocations not emerging at the surface of the resulting gallium nitride layer. The invention also concerns the optoelectronic and electronic components produced from said gallium nitride films.
REFERENCES:
patent: 2866342 (1958-12-01), Moorhead
patent: 4158322 (1979-06-01), Hardesty
patent: 6802902 (2004-10-01), Beaumont et al.
patent: 2002/0028564 (2002-03-01), Motoki et al.
patent: 2002/0117677 (2002-08-01), Okuyama et al.
patent: 0942459 (1999-09-01), None
patent: 1005068 (2000-05-01), None
patent: 1088914 (2001-04-01), None
patent: 2 063 759 (1971-07-01), None
patent: 2 806 788 (2001-09-01), None
patent: WO 99/20816 (1999-04-01), None
patent: WO 02/01078 (2002-01-01), None
“Reduction mechanisms for defect densities in GaN using one-or two-stop epitaxial lateral overgrowth methods”, P. Vennegues, et al., Journal of applied Physics, vol. 87. No. 9, May 1, 2000, pp. 4175-4181.
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial later overgrowth (FACELO), Hiramatsu, et al., Journal of Crystal Growth, vol. 221, No. 1-4, pp. 316-326.
“Dislocation medicated surface morphology of GaN”, B. Heying, Journal of Aplied Physics, vol. 85, No. 9, May 1, 1999, pp. 6470-6476, 2000.
“Effect of SB as a Surfactant During the Lateral Epitaxial Overgrowth of Gan by Metalorganic Vapor Phas Epitaxy”, Zhang et al, Applied Physics Letters, vol. 79, No. 19, Nov. 5, 2001, pp. 3059-6951.
Beaumont Bernard
Faurie Jean-Pierre
Gibart Pierre
Blakely , Sokoloff, Taylor & Zafman LLP
Kunemund Robert M.
Lumilog
LandOfFree
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