Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-03-01
2005-03-01
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S093000, C117S097000, C117S105000, C117S108000
Reexamination Certificate
active
06860943
ABSTRACT:
Disclosed is a method for producing a Group III nitride compound semiconductor including a pit formation step in which a portion of an uppermost layer of a first Group III nitride compound semiconductor layer containing one or more sub-layers, the portion containing lattice defects, is subjected to treatment by use of a solution or vapor which corrodes the portion more easily than it corrodes a portion of the uppermost layer containing no lattice defects, the first Group III nitride compound semiconductor layer not being accompanied by a substrate therefor as a result of removal therefrom, or being accompanied by a substrate such that the semiconductor layer is formed with or without intervention of a buffer layer provided on the substrate; and a lateral growth step of growing a second Group III nitride compound semiconductor layer through vertical and lateral epitaxial overgrowth around nuclei as seeds for crystal growth which are on flat portions of the uppermost layer of the first Group III nitride compound semiconductor layer, but not on portions of the uppermost layer that define pits formed through the pit formation step.
REFERENCES:
patent: 5185290 (1993-02-01), Aoyagi et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 6051849 (2000-04-01), Davis et al.
patent: 6110277 (2000-08-01), Braun
patent: 6121121 (2000-09-01), Koide
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 6329667 (2001-12-01), Ota et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6365921 (2002-04-01), Watanabe et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 0 551 721 (1993-07-01), None
patent: 0 779 666 (1997-06-01), None
patent: 0 951 055 (1999-10-01), None
patent: 0 993 048 (2000-04-01), None
patent: 1 045 431 (2000-10-01), None
patent: 1 059 661 (2000-12-01), None
patent: 1 059 677 (2000-12-01), None
patent: 49-149679 (1973-04-01), None
patent: 48-95181 (1973-12-01), None
patent: 51-137393 (1976-11-01), None
patent: 55-34646 (1978-08-01), None
patent: 57-115849 (1982-07-01), None
patent: 58-33882 (1983-02-01), None
patent: 1-316459 (1989-12-01), None
patent: 3-133182 (1991-06-01), None
patent: 4-10665 (1992-01-01), None
patent: 4-84418 (1992-03-01), None
patent: 4-303920 (1992-10-01), None
patent: 05-041536 (1993-02-01), None
patent: 5-110206 (1993-04-01), None
patent: 5-283744 (1993-10-01), None
patent: 05-343741 (1993-12-01), None
patent: 6-196757 (1994-07-01), None
patent: 7-249830 (1995-09-01), None
patent: 07-273367 (1995-10-01), None
patent: 08-064791 (1996-03-01), None
patent: 8-102549 (1996-04-01), None
patent: 8-116090 (1996-05-01), None
patent: 8-222812 (1996-08-01), None
patent: 8-274411 (1996-10-01), None
patent: 9-162125 (1997-06-01), None
patent: 10-312971 (1998-11-01), None
patent: 10-321954 (1998-12-01), None
patent: 11-31864 (1999-02-01), None
patent: 11-043398 (1999-02-01), None
patent: 11-135770 (1999-05-01), None
patent: 11-135832 (1999-05-01), None
patent: 11-145516 (1999-05-01), None
patent: 11-145519 (1999-05-01), None
patent: 11-191533 (1999-07-01), None
patent: 11-191657 (1999-07-01), None
patent: 11-191659 (1999-07-01), None
patent: 11-219910 (1999-08-01), None
patent: 11-251632 (1999-09-01), None
patent: 11-260737 (1999-09-01), None
patent: 11-274082 (1999-10-01), None
patent: 11-330546 (1999-11-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2000-44121 (2000-02-01), None
patent: 2000-91253 (2000-03-01), None
patent: 2000-106455 (2000-04-01), None
patent: 2000-106473 (2000-04-01), None
patent: 2000-124500 (2000-04-01), None
patent: 2000-150959 (2000-05-01), None
patent: 2000-174393 (2000-06-01), None
patent: 2000-232239 (2000-08-01), None
patent: 2000-261106 (2000-09-01), None
patent: 2000-277437 (2000-10-01), None
patent: 2000-299497 (2000-10-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2000-357843 (2000-12-01), None
patent: 2001-60719 (2001-03-01), None
patent: 2001-93837 (2001-04-01), None
patent: 2001-111174 (2001-04-01), None
patent: 2001-122693 (2001-05-01), None
patent: 2001-176813 (2001-06-01), None
patent: 2001-257193 (2001-09-01), None
patent: WO9711518 (1997-03-01), None
patent: PCT WO 9847170 (1998-10-01), None
patent: PCT WO 9901594 (1999-01-01), None
patent: PCT WO 0004615 (2000-01-01), None
patent: PCT WO 0055893 (2000-09-01), None
patent: PCT WO 02058120 (2002-07-01), None
PCT Forms 338 and 409 (IPER) (PCT/JP02/05446) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/02628) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/01159) and translations thereof.
Hidetada Matsushima et al., “Selective growth of GaN on sub-micron pattern by MOVPE”, Technical Report of IEICE, pp. 41-46.
Yoshinori Ujiie et al., “Epitaxial Lateral Overgrowth of GaAs on a Si Substrate”, Japanese Journal of Applied Physics, vol. 28, No. 3, Mar., 1989, pp. L337-L339.
Partial Translation of Japanese Patent Application No. 9-311518 dated Jun. 10, 2003.
D. Kapolnek et al., “Anisotropic epitaxial lateral growth in GaN selective area epitaxy”, Appl. Phys. Lett. 71 (9), Sep. 1, 1997, pp. 1204-1206.
Wolf et al., “Silicon Processing for the VLSI Era,” vol. 1, p. 5, Lattice Press, 1986.
Translation of PCT Forms 338 and 409 (PCT/JP01/01928).
Translation of PCT Forms 338 and 409 (PCT/JP01/01396).
Nam et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy”, pp. 2638-2640, Appl. Phys. Lett. 71 (18), Nov. 3, 1997.
Hiramatsu et al., “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy”, pp. 104-111, Materials Science and Engineering B59 (1999).
Akasaki et al., “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga1-xA1xN . . . Movpe” pp. 209-219, Journal of Crystal Growth 98 (1989) North-Holland, Amsterdam.
Yang et al., “High quality GaN-InGaN heterostructures grown on (III) silicon substrates”, pp. 3566-3568, Appl. Phys. Lett. 69 (23), Dec. 2, 1996.
Wolf et al., for the VLSI Era, vol. 1—Process Technology, p. 5, “Silicon: Single Crystal Growth and Wafer Preparation.”
Luther et al., “Titanium and titanium nitride contacts to n-type gallium nitride”, Semicond. Sci. Technol. 13 (1998) pp. 1322-1327.
Dimitriadis et al., “Contacts of titanium nitride to—and p-type gallium nitride films”, Solid-State Electronics 43 (1999), pp. 1969-1972.
Zheleva et al., “Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures”, MRS Internet J.Nitride Semicond. Res. 4SI, G3.38(1999), 6 pages total.
Uchida et al., “A1GaInN based Laser Diodes”, In-Plans Semiconductor Lasers IV, III-Vs Review vol. 13, No. 3, May/Jun. 2000, pp. 156-164.
Zheleva et al., Pendeo-Epitaxy versus Lateral Epitaxial Overgrowth of GaN: A Comparative Study via Finite element Analysis, Journal of electronic Materials, vol. 28, No. 4, Apr. 1999, pp. 545-551.
Zheleva et al., “Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films”, Journal of Electronic Materials, vol. 28, No. 4, 1999, pp. L5-L8.
Koike Masayoshi
Watanabe Hiroshi
Hiteshew Felisa
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
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