Method for producing a wafer with a monocrystalline silicon carb

Details Method for producing a wafer with a monocrystalline silicon carb Method for producing a wafer with a monocrystalline silicon carb

1993-10-13

1995-12-05

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 90, C30B 2516

Patent

active

054719461

ABSTRACT:
To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.

REFERENCES:
patent: 4855254 (1989-08-01), Eshita et al.

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