Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-09-24
1998-08-11
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 99, 117102, 117929, 423446, C30B 2902
Patent
active
057922560
ABSTRACT:
A method of making n-type semiconducting diamond is disclosed, which is doped with boron-10 at the time of diamond formation and bombarded with neutrons for in-situ conversion of boron-10 to lithium-7, while filtering the neutrons from high energy components during irradiation.
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Karumidze G. S.
Kucherov R. Ya
Kucherov Yan R.
Shavelashvili Shota Shalvovich
ENECO, Inc.
Evans Paul S.
Kunemund Robert
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