Method for producing Group III nitride compound semiconductor

Details Method for producing Group III nitride compound semiconductor Method for producing Group III nitride compound semiconductor

2006-09-26

2006-09-26

Davis, Robert B. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S952000, C438S694000, C438S695000

Reexamination Certificate

active

07112243

ABSTRACT:
The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.

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Japanese Office Action dated Jun. 22, 2004 with Partial English Translation.

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