Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1996-05-24
1998-04-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
117953, 437107, C30B 2516
Patent
active
057359504
ABSTRACT:
A process for manufacturing precise alloy compositions in nonlinear alloy systems. The invention implements a new quadratic fitting function that relates alloy composition c.sub.A for a variable A to input fluxes f.sub.A and f.sub.B, as c.sub.A =f.sub.A.sup.2 /(f.sub.A.sup.2 +/.beta.f.sub.B.sup.2). .beta. is a parameter that is used to modify the incorporation of the Group V input variable B. This modification is necessary because of different surface populations of Group V dimer species. This new fitting function precisely predicts alloy compositions in nonlinear systems, such as the GaAs.sub.l-y P.sub.y system, where y is set equal to the composition c.sub.A.
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L. Samuelson et al., "Organometallic Epitaxial Growth of GaAs.sub.1-x P.sub.x, " Journal de Physique, Colloque C5, supplement au n.degree. 12, Tome 43, decembre 1982, pp. C5-323 to C5-338.
G.B. Stringfellow, Organometallic Vapor-Phase Epitaxy: Theory and Practice Academic Press, Inc., San Diego, CA (1989), pp. 114-126.
Cunningham John Edward
Goossen Keith Wayne
Kunemund Robert
Lucent Technologies - Inc.
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