Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2006-08-22
2006-08-22
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S089000, C117S090000, C117S106000
Reexamination Certificate
active
07094288
ABSTRACT:
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
REFERENCES:
patent: 6527858 (2003-03-01), Yoshida et al.
patent: PCT/JP99/05581 (2000-04-01), None
patent: WO 00/08691 (2000-02-01), None
Sato, K. et al: “Materials design for the low-resistivity p-type Zn0 and transparent ferromagnet with transition metal atom doped Zn0: Prediction vs. experiment”, Mat. Res. Soc. Symp. Proc., Apr. 24-27, 2000, vol. 623, pp. 65-75, XP-001020750.
Minegishi, Kazunori et al., “Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition”, Nov. 1, 1997, Journal of Applied Physics vol. 36, No. 11A, pp. L1453-1455, XP002926102.
Iwata, K. et al., “Nitrogen-induced defects in Zn0: N grown on sapphire substrate by gas source MBE”, Feb. 2000, Journal of Crystal Growth, vol. 209, No. 2-3, pp. 526-531.
Yamamoto, Tetsuya et al., “Unipolarity of Zn0 with a wide-band gap and its solution using codoping method”, Jun. 2000, Journal of Crystal Growth, vol. 214-215, pp. 552-555.
DLA Piper Rudnick Gray Cary US LLP
Hiteshew Felisa
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