Method for producing nitride semiconductor crystal, and...

Details Method for producing nitride semiconductor crystal, and... Method for producing nitride semiconductor crystal, and...

2007-11-13

2007-11-13

Smith, Duane (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

C117S088000, C117S089000, C117S090000, C117S952000, C117S056000, C438S093000, C438S479000, C438S481000, C257S013000, C257S094000, C257S096000, C257S097000, C257S098000, C257S103000, C257S184000

Reexamination Certificate

active

10396831

ABSTRACT:
A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate using the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.

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