Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2011-08-16
2011-08-16
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S100000, C117S101000, C117S096000, C117S095000, C117S915000
Reexamination Certificate
active
07998273
ABSTRACT:
An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.
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Brückner Peter
Habel Frank
Köhler Klaus
Peter Matthias
Scholz Ferdinand
Foley & Lardner LLP
Freiberger Compound Materials GmbH
Kunemund Robert M
Osram Opto Semiconductors GmbH
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