LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes; ,Forming from vapor or gaseous state

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Group III nitride compound semiconductor device and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Group III nitride crystal substrate, method of its...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Forming a platelet shape or a small diameter – elongate,...

Group III-nitride crystal, manufacturing method thereof,...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter

Group III-nitride thin films grown using MBE and bismuth

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Group III-V nitride semiconductor growth method and vapor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growing method of gallium nitride related compound semiconductor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Grown diamond mosaic separation

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Growth method by repeatedly measuring flux in MBE chamber

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of a single-crystal region of a III-V compound on a...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride from a melt

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of bulk single crystals of aluminum nitride: silicon carb

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Growth of colorless silicon carbide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of doped semiconductor monolayers

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of epitaxial semiconductor material with improved...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of textured gallium nitride thin films and nanowires...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Growth of textured gallium nitride thin films on...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Fully-sealed or vacuum-maintained chamber

Growth of ultra-high purity silicon carbide crystals in an...