Growth of colorless silicon carbide crystals

Details Growth of colorless silicon carbide crystals Growth of colorless silicon carbide crystals

1996-02-05

1998-02-17

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 89, 117 93, 117102, C30B 2936

Patent

active

057187606

ABSTRACT:
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal to levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.

REFERENCES:
patent: 4966860 (1990-10-01), Suzuki et al.
patent: 5030580 (1991-07-01), Furukawa et al.
patent: 5433167 (1995-07-01), Furukawa et al.
Introduction to Ceramics, W. D. Kingery et al., Second Edition, John Wiley & Sons, pp. 676-679.
Optical and Electronic Properties of SiC, W. H. Choyke, The Physics and Chemistry of Carbides, Nitrides and Borides, Manchester, England, Sep. 1989, pp. 1-25.

Affiliated with

Also associated with

Rating

Growth of colorless silicon carbide crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Growth of colorless silicon carbide crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth of colorless silicon carbide crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1781107