Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-07-03
2010-10-26
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S088000, C117S089000, C117S095000, C117S952000
Reexamination Certificate
active
07819974
ABSTRACT:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
REFERENCES:
patent: 7238232 (2007-07-01), Sunkara et al.
patent: 2003/0039602 (2003-02-01), Sharma et al.
patent: 2004/0003495 (2004-01-01), Xu
Chandrasekaran Hari
Li Hongwei
Sunkara Mahendra Kumar
Kunemund Robert M
Song Matthew J
Stites & Harbison PLLC
University of Louisville Research Foundation Inc.
Wright Terry L.
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