Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-04-25
2006-04-25
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S089000
Reexamination Certificate
active
07033438
ABSTRACT:
A method for growing a single-crystal region of a III-V compound on a surface corresponding to a crystallographic plane of a single-crystal silicon substrate, including the steps of growing by epitaxy on the substrate a single-crystal germanium layer; etching in a portion of the thickness of the germanium layer an opening, the bottom of which corresponds to a single surface inclined with respect to the cristallographic plane or to several surfaces inclined with respect to the cristallographic plane; and growing the single-crystal III-V compound on the bottom of the opening.
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French Search Report from French Patent Application 02/08862, filed Jul. 12, 2002, abstract only.
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Hiteshew Felisa
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Wolf Greefield & Sacks, P.C.
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