Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-07-03
2007-07-03
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S095000
Reexamination Certificate
active
10427747
ABSTRACT:
A synthesis route to grow textured thin film of gallium nitride on amorphous quartz substrates and on single crystalline substrates such as c-sapphire and polycrystalline substrates such as pyrolytic boron nitride (PBN), alumina and quartz using the dissolution of atomic nitrogen rather than molecular nitrogen to allow for growth at subatmospheric pressure.
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patent: 6562124 (2003-05-01), Ivantzov et al.
Growth of Oriented Gallium Nitride Films on Amorphous Subtrates by Self-Assembly, Li, et al Dept. of Chemical Engineering , University of Louisville.
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Chandrasekaran Hari
Li Hongwei
Sunkara Mahendra Kumar
Carrithers David W.
Carrithers Law Office PLLC
Hiteshew Felisa
University of Louisville
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