Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1996-10-17
1999-01-12
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117 87, 117 88, 117 99, C30B 2502
Patent
active
058580867
ABSTRACT:
Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.
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Faust Richard S.
Garrett Felisa
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