Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Patent
1994-12-05
1996-09-17
Nguyen, Nam
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
437 7, 437105, 437126, 437133, 117 84, 117 86, C30B 2300
Patent
active
055564623
ABSTRACT:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.
REFERENCES:
patent: 5092320 (1992-02-01), Aspenes et al.
patent: 5179399 (1992-12-01), Brennau et al.
Brennan et al. "Application of Refection Mass Spectrometry to MBE growth of InAlAs and InGaAs" Jr. Vac. Sci. & Tech. B 7 &(2), Mar./Apr. 1987, pp. 277-82.
Celii Francis G.
Kao Yung-Chung
Purdes Andrew J.
Brady III W. James
Donaldson Richard L.
Nguyen Nam
Paladugu Ramamohan Rao
Swayze, Jr. W. Daniel
LandOfFree
Growth method by repeatedly measuring flux in MBE chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Growth method by repeatedly measuring flux in MBE chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Growth method by repeatedly measuring flux in MBE chamber will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-410569