Growth method by repeatedly measuring flux in MBE chamber

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

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437 7, 437105, 437126, 437133, 117 84, 117 86, C30B 2300

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active

055564623

ABSTRACT:
Molecular beam epitaxy (202) with growing layer thickness control (206) by feedback of integrated mass spectormeter (204) signals. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes.

REFERENCES:
patent: 5092320 (1992-02-01), Aspenes et al.
patent: 5179399 (1992-12-01), Brennau et al.
Brennan et al. "Application of Refection Mass Spectrometry to MBE growth of InAlAs and InGaAs" Jr. Vac. Sci. & Tech. B 7 &(2), Mar./Apr. 1987, pp. 277-82.

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