Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-07-21
2011-11-01
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S104000, C117S105000, C117S090000, C117S929000
Reexamination Certificate
active
08048223
ABSTRACT:
The present invention provides in one example embodiment a synthetic diamond and a method of growing such a diamond on a plurality of seed diamonds, implanting the grown diamond with ions, and separating the grown diamond from the plurality of seed diamonds.
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Doering Patrick J.
Genis Alfred
Linares Robert C.
Apollo Diamond, Inc.
Kunemund Robert M
Schwegman Lundberg & Woessner, P.A.
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