Growth of bulk single crystals of aluminum nitride: silicon carb

Details Growth of bulk single crystals of aluminum nitride: silicon carb Growth of bulk single crystals of aluminum nitride: silicon carb

1998-10-09

2000-07-11

Utech, Benjamin L.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

117 87, 117 88, 117950, 117951, 117952, C30B 2500

Patent

active

060866721

ABSTRACT:
Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C on a crystal growth interface.

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