Growth of doped semiconductor monolayers

Details Growth of doped semiconductor monolayers Growth of doped semiconductor monolayers

1993-06-15

1997-12-02

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117102, 117105, 117953, 117954, 117956, 437102, 437103, C30B 2514

Patent

active

056931395

ABSTRACT:
A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface.
Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.

REFERENCES:
Tohru Kurabayashi et al., "Photoexcited Molecular Layer Epitaxial Growth Process of GaAs, GaAs and Si, and Photo-Vapor-Epitaxy of GaAs", Collected Summaries of Researches (published for Research Development Corporation of Japan), Dec. 19, 1986, cover pages and pp. 1-24 all in Japanese (An English translation of the pertinent pp. 13-14 is attached.).
Junichi Nishizawa et al., "Molecular Layer Epitaxy", Semiconductor Research, vol. 29 (published for Industrial Survey under the Foundation for Promoting Semiconductor Research), Aug. 22, 1987, cover page and p. 97-136 all in Japanese (An English translation of the pertinent pp. 98 to 103 is attached.).
Tohru Kurabayashi, "Photo-Assisted Molecular Layer Epitaxy", Semiconductor Research, vol. 33 (published for Industrial Survey under the Foundation for Promoting Semiconductor Research, Aug. 8, 1989, cover page and 33 pags all in Japanese (An English translation of the pertinent pp. 4-6 is attached.).
Junichi Nishizawa, "Crystal Growth by Atomic Layer Epitaxy"Applied Physics, vol. 53, No. 6 (1984), (An English translation of the pertinent pp. 516-519 is attached.).

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