Using selective deposition to form phase-change memory cells

Using silicate layers for composite semiconductor

Using silicide cap as an etch stop for multilayer metal process

Using sonic energy in connection with laser-assisted direct...

Using stabilizers in electroless solutions to inhibit...

Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone...

Using UV/VIS spectrophotometry to regulate developer...

Using V-groove etching method to reduce alignment mark...

Using zeolites to improve the mechanical strength of low-k...

Utilization of a Ta-containing cap over copper to facilitate...

Utilization of annealing enhanced or repaired seed layer to...

Utilization of die repattern layers for die internal connections

Utilization of disappearing silicon hard mask for...

Utilization of disappearing silicon hard mask for...

Utilization of disappearing silicon hard mask for...

Utilization of doped glass on the sidewall of the emitter...

Utilization of macro power routing area for buffer insertion

Utilization of SiH.sub.4 soak and purge in deposition processes

Utilizing amorphorization of polycrystalline structures to...

Utilizing atomic layer deposition for programmable device