Using V-groove etching method to reduce alignment mark...

Details Using V-groove etching method to reduce alignment mark... Using V-groove etching method to reduce alignment mark...

2005-03-29

2005-03-29

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

Reexamination Certificate

active

06872630

ABSTRACT:
A new method is provided for the creation of an alignment mark. V-groove etching is applied whereby this anisotropic etch stops at the (1,1,1) crystal direction of the silicon of the substrate. The invention applies a wet etchant to the surface of monocrystalline silicon of the silicon substrate by using a solution containing a mixture of potassium hydroxide (KOH) or N2H4or tetramethyl ammonium hydroxide (TMAH). This solution anisotropically etches the silicon substrate, forming grooves in the substrate having sidewalls that are sloped at an angle of about 54 degrees with the horizontal. The slope of the sidewalls is a function of the different etch rates of monocrystalline silicon along the different crystalline orientations. The surface of the substrate represents <100> planes of the silicon, which etches faster than the sloped sidewalls that represent the <111> plane. The KOH/N2H4/TMAH etch stops on the <111> plane of the silicon substrate.

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Sorab K. Ghandi VLSI Fabrication Principles John Wiley and Sons, Publishers 1994, pp. 598-601.

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