Semiconductor device manufacturing: process – Chemical etching – Altering etchability of substrate region by compositional or...
Reexamination Certificate
2007-06-19
2007-06-19
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Altering etchability of substrate region by compositional or...
C438S687000, C438S780000, C257SE21293
Reexamination Certificate
active
10988239
ABSTRACT:
Disclosed are methods for facilitating concurrent formation of copper vias and memory element structures. The methods involve forming vias over metal lines and forming copper plugs, wherein the copper plugs comprise memory element film forming copper plugs (memE copper plugs) and non-memory element forming copper plugs (non-memE copper plugs), forming a tantalum-containing cap over an upper surface of non-memE copper plugs, and depositing memory element films. The tantalum-containing cap prevents the formation of the memory element films in the non-memE copper plugs. The subject invention advantageously facilitates cost-effective manufacturing of semiconductor devices.
REFERENCES:
patent: 6656763 (2003-12-01), Oglesby et al.
patent: 6686263 (2004-02-01), Lopatin et al.
patent: 6746971 (2004-06-01), Ngo et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6770905 (2004-08-01), Buynoski et al.
patent: 6773954 (2004-08-01), Subramanian et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 6787458 (2004-09-01), Tripsas et al.
patent: 6803267 (2004-10-01), Subramanian et al.
patent: 6806526 (2004-10-01), Krieger et al.
patent: 6870183 (2005-03-01), Tripsas et al.
patent: 6900488 (2005-05-01), Lopatin et al.
patent: 6979837 (2005-12-01), Tripsas et al.
patent: 2006/0046502 (2006-03-01), Ngo et al.
patent: 2006/0102887 (2006-05-01), Avanzino et al.
Avanzino Steven C.
Kingsborough Richard P.
Leonard William
Pangrle Suzette K.
Shields Jeffrey A.
Advanced Micro Devices , Inc.
Amin Turocy & Calvin LLP
Anya Igwe U.
Baumeister B. William
Spansion LLC
LandOfFree
Utilization of a Ta-containing cap over copper to facilitate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Utilization of a Ta-containing cap over copper to facilitate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Utilization of a Ta-containing cap over copper to facilitate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3871406