Utilization of SiH.sub.4 soak and purge in deposition processes

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438683, 438905, 427588, H01L 2128

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active

058175768

ABSTRACT:
A method of processing a substrate, such as a semiconductor wafer, in a vacuum processing chamber includes the steps of depositing a material on a surface of the substrate using a gas mixture, and purging the chamber of residual gases by flowing SiH.sub.4 into the chamber. Preferably, WSi.sub.x is deposited on a semiconductor wafer using a mixture comprising WF.sub.6, dichlorosilane and a noble gas, and the chamber is subsequently purged of residual WF.sub.6 and dichlorosilane by flowing SiH.sub.4 into the chamber. A further method of processing a substrate in a vacuum processing chamber includes the step of conditioning the chamber by flowing SiH.sub.4 into the chamber prior to depositing a material on the surface of the substrate. Semiconductor wafers processed according to the inventive method are characterized by more uniform sheet resistance values and reduced film stress. A vacuum processing apparatus is also provided for practicing methods of the invention and includes a chamber, means for depositing a material, such as WSi.sub.x, on a surface of a substrate disposed within the chamber, and means for purging the chamber with SiH.sub.4.

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