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Gallium nitride high electron mobility transistor structure

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
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Gallium nitride substrate and gallium nitride layer...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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GaN LED with solderable backside metal

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
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GaN single crystal substrate and method of making the same

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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GaN substrate, substrate with epitaxial layer, semiconductor...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
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Gas inlets for wafer processing chamber

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Generation of low work function, stable compound thin films...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
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Germanium integrated CMOS wafer and method for manufacturing...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Graded core/shell semiconductor nanorods and nanorod barcodes

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
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Group III nitride compound semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Group III nitride compound semiconductor device

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Group III-nitride semiconductor thin film, method for...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Group-III metal nitride and preparation thereof

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
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Group-III nitride semiconductor stack, method of...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Growing method of GaAs quantum dots using chemical beam epitaxy

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
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Growing [110] silicon on [001] oriented substrate with...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Growth method for nitride semiconductor epitaxial layers

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
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Growth method for silicon nanowires and nanoparticle chains...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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Growth method of a nitride III-V compound semiconductor,...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
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Growth method of gallium nitride film

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
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