Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2008-02-21
2010-11-30
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S096000, C438S483000, C438S497000, C257SE21097, C257SE33004
Reexamination Certificate
active
07842588
ABSTRACT:
A method for forming a group-III metal nitride material film attached to a substrate including subjecting the substrate to an ambient pressure of no greater than 0.01 Pa, and heating the substrate to a temperature of between approximately 500° C.-800° C. The method further includes introducing a group III metal vapor to the surface of the substrate at a base pressure of at least 0.01 Pa, until a plurality of group III metal drops form on the surface, and introducing active nitrogen to the surface at a working pressure of between 0.05 Pa and 2.5 Pa, until group III metal nitride molecules form on the group III metal drops. The method also includes maintaining the working pressure and the active nitrogen until the group III metal nitride molecules diffuse into the group III metal drops, forming nitride/metal solution drops, and until the nitride/metal solution drops turn into a wetting layer on the substrate, and continuing to increase the concentration of group III metal nitride molecules in the wetting layer until all the group III metal atoms contained in the wetting layer are exhausted, and the wetting layer transforms into a group III metal nitride film.
REFERENCES:
patent: 5847397 (1998-12-01), Moustakas
patent: 5976398 (1999-11-01), Yagi
patent: 7078731 (2006-07-01), D'Evelyn et al.
patent: 2002/0100910 (2002-08-01), Kordesch
patent: 2007/0158785 (2007-07-01), D'Evelyn et al.
patent: 2007/0212803 (2007-09-01), Shibata
patent: 2007/0254458 (2007-11-01), Bour et al.
patent: 2008/0282967 (2008-11-01), Einav
patent: 2009/0081109 (2009-03-01), Einav
patent: 2010/0015787 (2010-01-01), Yu et al.
Kondo et al. “Fabrication of GaN dot structures on Si substrates by droplet epitaxy.”Phys. Stats. Sol. A. vol. 203.No. 7. 2006. pp. 1700-1703.
Nagata et al. “Low-temperature growth of GaN microcrystals from position-controlled Ga droplets arrayed by a low-energy focused ion beam system.”J. Of Crystal Growth. vol. 283. 2005. pp. 328-331.
Chang et al. “Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots.”Physical Review B. vol. 62. No. 11. 2000. pp. 6959-6992.
Kim et al. “Near room temperature droplet epitxay for fibration of InAs quantum dots.”Applied Physics Letters. Vol. 85.No. 24. 2004. pp. 5893-5895.
Lanke et al. “Effect of Ion-Energy of the properties of amorphous GaN films produced by ion-assisted deposition.”Modern Physics Letters B. vol. 15.Nos. 28 & 29. 2001. pp. 1355-1360.
Ghyka Alexander G
Merchant & Gould P.C.
Mosaic Crystals
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