Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-06-07
2011-06-07
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S604000, C438S763000, C257SE21086
Reexamination Certificate
active
07955957
ABSTRACT:
Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.
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Choi Rak Jun
Shiro Sakai
Yoshiki Naoi
McDermott Will & Emery LLP
Ngo Ngan
Samsung LED Co., Ltd.
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