Growth method for nitride semiconductor epitaxial layers

Details Growth method for nitride semiconductor epitaxial layers Growth method for nitride semiconductor epitaxial layers

2011-06-21

2011-06-21

Maldonado, Julio J (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with subsequent...

C438S047000, C438S094000, C438S483000, C117S104000, C257SE21120, C257SE21117, C257SE21126

Reexamination Certificate

active

07964483

ABSTRACT:
The present invention relates to a method for growing a nitride semiconductor epitaxial layer, which comprises the steps of growing a second nitride semiconductor epitaxial layer on a first nitride semiconductor epitaxial layer at a first temperature, growing a third nitride semiconductor epitaxial layer on the second nitride semiconductor epitaxial layer at a second temperature, and releasing nitrogen from the second nitride semiconductor epitaxial layer by increasing a temperature to a third temperature higher than the second temperature, thereby, it is possible to lower the defect density of epitaxial layers and reduce warpage of a substrate.

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PCT International Search Report for PCT/KR2004/001665 mailed on Aug. 27, 2004.

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