Germanium integrated CMOS wafer and method for manufacturing...

Details Germanium integrated CMOS wafer and method for manufacturing... Germanium integrated CMOS wafer and method for manufacturing...

2007-08-28

2007-08-28

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S508000, C257SE21103

Reexamination Certificate

active

11064035

ABSTRACT:
The present invention discloses an integration flow of germanium into a conventional CMOS process, with improvements in performing selective area growth, and implementing electrical contacts to the germanium, in a way that has minimal impact on the preexisting transistor devices. The present invention also provides methods to integrate the germanium without impacting the optical or electrical performance of these devices, except where intended, such as in a germanium photodetector, or germanium waveguide photodetector.

REFERENCES:
patent: 4614564 (1986-09-01), Sheldon et al.
patent: 6537894 (2003-03-01), Skotnicki et al.

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