Group III nitride compound semiconductor device

Details Group III nitride compound semiconductor device Group III nitride compound semiconductor device

2011-03-29

2011-03-29

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C257SE21090

Reexamination Certificate

active

07915147

ABSTRACT:
Disclosed is a group III nitride compound semiconductor device having a substrate, buffer layers on the substrate, and a group III nitride compound semiconductor layer on the top layer of the buffer layers. The buffer layers comprises a first buffer layer formed on the substrate and a second buffer layer formed on the first buffer layer. The first buffer layer is made of transition metal nitride, and the second buffer layer is made of nitride of gallium and a transition metal.

REFERENCES:
patent: 7550782 (2009-06-01), Murakami et al.
patent: 2000-77712 (2000-03-01), None
Ivanovskii et al. “Electronic Structure and Bonding Configuration of the H-Phases Ti2MC and Ti2MN (M=Al, Ga, In)”, Inorganic Materials, vol. 36, No. 1, 2000 pp. 28-31.
Non-Final Office Action issued Sep. 14, 2010 in co-pending U.S. Appl. No. 12/748,840.
Katz, et al., “The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP,” J. Appl. Phys. 71, 993-1000 (1992).

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