Gallium nitride high electron mobility transistor structure

Details Gallium nitride high electron mobility transistor structure Gallium nitride high electron mobility transistor structure

2007-06-05

2007-06-05

Dickey, Thomas L. (Department: 2826)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S483000, C257SE21127

Reexamination Certificate

active

11132533

ABSTRACT:
A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.

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